Appeal No. 1997-3967
Application No. 08/482,058
This is a decision on appeal from the final rejection of
claims 14, 16, 19 through 21, 23 and 26 through 28. The final
rejection of claims 17, 18, 24 and 25 under 35 U.S.C. § 103
has been withdrawn by the examiner in the answer and is not
before us on appeal.
The invention is directed to an integrated circuit
structure having both bipolar and field effect transistors
where the bipolar transistor is of the single polysilicon type
and has a thick dielectric between the base and the emitter
polysilicon electrode plus a sidewall dielectric on the
emitter electrode.
Representative independent claim 14 is reproduced as
follows:
14. An integrated circuit structure at a semiconductor
surface of a body, comprising:
a bipolar transistor comprising:
a collector region of a first conductivity type;
an intrinsic base region of a second conductivity
type disposed at said surface and within said collector
region;
an emitter region of said first conductivity type
disposed at said surface and within said intrinsic base
region;
2
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