Appeal No. 1997-3967
Application No. 08/482,058
a base dielectric layer, overlying said intrinsic
base region and having a contact hole therethrough to said
emitter region; and
an emitter electrode, disposed over said dielectric
layer and in contact with said emitter region through said
contact hole;
an insulated-gate field effect transistor, comprising:
a well region of said first conductivity type and
having the same impurity concentration as said collector
region;
a gate dielectric comprising thermal silicon dioxide
of a thickness substantially thinner than said base dielectric
layer of said bipolar transistor, disposed over a portion of
said well region;
a gate electrode disposed over said well region and
insulated therefrom by said gate dielectric; and
source/drain regions of said second conductivity
type disposed at said surface adjacent said gate electrode and
within said well region;
an isolation structure disposed at said surface between
said bipolar transistor and said insulated-gate field effect
transistor; and
sidewall dielectric filaments, disposed adjacent the
outer edges of said emitter electrode and said base dielectric
layer outside of said contact hole, and adjacent the sides of
said gate electrode of said insulated-gate field effect
transistor.
The examiner relies on the following references:
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