Appeal No. 1997-2026
Application 08/317,108
application.
The disclosed invention pertains to electrical
connections to high dielectric constant materials in
microelectronics such as capacitors. One embodiment comprises
a conductive lightly donor doped perovskite layer, and a high-
dielectric-constant material layer overlaying the conductive
lightly donor doped perovskite layer. The invention is
further illustrated below by claim 24.
24. A method of forming a microelectronic capacitor
structure on a semiconductor substrate in combination with
other integrated circuits, said method comprising:
(a) forming a semiconductor substrate;
(b) forming an electrically conductive buffer layer on
said semiconductor substrate;
(c) forming a conductive donor doped perovskite layer
having between about 0.01 and about 0.3 mole percent doping on
said buffer layer; and
(d) forming a high-dielectric-constant material layer on
said perovskite layer, whereby said donor doped perovskite
layer provides a chemically and structurally stable electrical
connection to said high-dielectric-constant material layer.
The references relied on by the Examiner are:
Miyasaka et al. (Miyasaka) 5,053,917 Oct. 1,
1991
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