Appeal No. 1997-3484
Application 08/089,359
a first drain contact above said wide bandgap
layer, wherein said first source contact and said first
drain contact are alloyed and thereby driven into said
material structure to make contact with said low-noise
channel layer; and
a first gate contact to said low-noise buffer
layer; and
a second active region comprising:
a second source contact above said wide
bandgap layer;
a second drain contact above said wide bandgap
layer, wherein said second source contact and said
second drain contact are alloyed and thereby driven
into said material structure to make contact with said
power channel layer; and
a second gate contact to said wide band-gap
[sic] layer;
wherein said first active region and said second
active region are electrically isolated from one
another.
The Examiner relies on the following prior art:
Itoh 4,866,490 September 12,
1989
Takikawa 5,302,840 April 12, 1994
(filed June 17, 1992)
Claims 1 and 3-5 stand rejected under 35 U.S.C.
§ 102(e) as anticipated by, or in the alternative, under
35 U.S.C. § 103 as being unpatentable over Takikawa.
- 3 -
Page: Previous 1 2 3 4 5 6 7 8 9 Next
Last modified: November 3, 2007