Ex parte FUJISAKI et al. - Page 8




          Appeal No. 1998-1660                                                        
          Application No. 08/108,499                                                  


          well as disclosing structure which is capable of performing                 
          the recited functional limitations.  RCA Corp. v. Applied                   
          Digital Data Systems, Inc., 730 F.2d 1440, 1444, 221 USPQ 385,              
          388 (Fed. Cir.); cert. dismissed, 468 U.S. 1228 (1984); W.L.                
          Gore and Associates, Inc. v. Garlock, Inc., 721 F.2d 1540,                  
          1554, 220 USPQ 303, 313 (Fed. Cir. 1983), cert. denied, 469                 
          U.S. 851 (1984).                                                            
               With respect to independent claims 11 and 12, the                      
          Examiner attempts (Answer, pages 5 and 6) to read the various               
          claim limitations on the Ghandhi reference.  In particular,                 
          the Examiner points to the disclosure at page 87 of Ghandhi                 
          which suggests a particular range of melt temperature                       
          variation during crystal growth.  In the Examiner’s line of                 
          reasoning, this temperature control criteria will inherently                
          produce a GaAs crystal which would satisfy the particular                   
          claimed silicon atom density and lattice constant inequality                
          relationship requirement.                                                   
               After reviewing the disclosure of Ghandhi in light of the              
          arguments of Appellants and the Examiner, we are in agreement               
          with Appellants that the Examiner’s conclusion of inherency is              
          lacking of any support on the record.  To establish inherency,              
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