Appeal No. 1998-2046
Application No. 08/787,332
second electrode layers 11 and 13 respectively. Organic
insulation film 17 is formed above first electrode 11, on the
surface of film 15. An interconnection layer 19 (third
electrode) is formed over film 17 (and first electrode 11),
and also makes contact with second electrode 13 via through
hole 15a. The thickness of the insulating material at T10
ensures a high breakdown voltage between electrodes 11 and 19,
while the narrower thickness of insulating material at T20
allows a low aspect ratio at hole 15a, allowing adequate fill
by sputtering.
Independent claim 1 is reproduced as follows:
1. A semiconductor device, comprising:
a semiconductor substrate having a main surface;
a first conductive layer extending entirely above the
main
surface of the semiconductor substrate;
a second conductive layer extending entirely above the
main
surface of the semiconductor substrate, which second
conductive
layer is different from said first conductive layer, said
first and second conductive layers being structurally situated
at the same level with respect to the main surface of the
semiconductor
substrate, wherein said second conductive layer comprises a
2
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