Ex parte HYNECEK - Page 2




          Appeal No. 1998-2877                                                        
          Application No. 08/567,680                                                  


               Claim 12 is the only independent claim on appeal, and it               
          reads as follows:                                                           
               12.  An active transistor charge detection device with a               
          positive feedback circuit comprising:                                       
                    an active transistor pixel charge detection device                
          having:                                                                     
                         a semiconductor substrate of a first                         
          conductivity        type;                                                   
                         a semiconductor layer of a second conductivity               
                    type in the substrate;                                            
                         virtual phase regions of the first conductivity              
                    type formed in the semiconductor layer, the virtual               
                    phase regions forming virtual phase potential areas               
          for            carriers of the second conductivity type;                    
                         a transistor source region of a first                        
          conductivity        type formed in the semiconductor layer and              
          spaced apart        from the virtual phase regions;                         
                         a charge drain region of a second conductivity               
                    type formed in the semiconductor layer and spaced                 
          apart          from the virtual phase regions;                              
                         an insulating layer on the semiconductor layer;              
                         a transistor gate electrode formed on the                    
                    insulating layer and located above a portion of the               
                    semiconductor layer that surrounds the transistor                 
                    source region between virtual phase regions, the                  
                         transistor gate electrode forming a transistor               
                         potential well for carriers of the second                    
          conductivity        type in response to a voltage;                          



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