Appeal No. 1998-2877
Application No. 08/567,680
a transfer gate electrode formed on the
insulating layer and separated from the transistor
gate electrode by the virtual phase regions, the
transistor gate electrode located between the transfer
gate electrode and the charge drain, the transfer
gate electrode forming a transfer potential area for
carriers of the second conductivity type in response
to a voltage;
resetting circuitry coupled to the transistor
gate electrode;
amplifier circuitry coupled to the transistor
source region; and
feedback circuitry coupled between an output
of the amplifier circuitry and the transistor
gate electrode for increasing the source
sensitivity.
The reference relied on by the examiner is:
Hynecek 5,546,438 Aug. 13,
1996
Claims 12 through 16 stand rejected under the judicially
created doctrine of obviousness-type double patenting.
According to the examiner (Answer, pages 3 and 4), claims 12
through 16 on appeal stand rejected for double patenting over
the claims in Hynecek.
Reference is made to the brief and the answer for the
respective positions of the appellant and the examiner.
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