Appeal No. 1998-1628
Application No. 08/384,597
atoms reaching the substrate surface per unit time and per
unit area and N is the number of ions reaching the substrate
surface per unit time and per unit area. The apparatus
further includes means for forming a film of the evaporation
material on top of the mixed layer. Due to the mixed layer,
the film adheres well to the substrate. Claim 5 is
illustrative of the claimed invention, and it reads as
follows:
5. A film forming apparatus comprising:
means for continuously moving an objective substrate
through a vacuum chamber;
an evaporation source disposed at a first location
for vacuum evaporation of a material onto a substrate surface
as the objective substrate is moved through the vacuum chamber
in a first direction;
an ion source disposed at a second location for
radiating ions having ion energy in a range of 500eV to 8KeV
toward the substrate surface as the objective substrate is
moved through the vacuum chamber in the first direction, said
ion source being disposed so that the radiating ions form a
mixed layer with the ratio (M/N) of the number M of
evaporation material atoms reaching the substrate surface per
unit time and per unit area to the number N of ions reaching
the substrate surface per unit time and per unit area being in
a range from 10 to 1000;
the ion and evaporation sources operating to produce
a mixed layer on the substrate surface as the substrate is
moved through the vacuum chamber in the first direction; and
2
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