Appeal No. 1998-1667
Application No. 08/224,211
action of the chemical-mechanical polishing step.
(Emphasis added).
Finally, Sandhu teaches, at col. 8, ll. 10-12:
This is anticipated to result in formation of only
very thin layers of the reactant product which would
be removed by the mechanical actions of the slurry.
(Emphasis added).
From these teachings of Sandhu, we determine that it is
clear that the mechanical action of the CMP technique of
Sandhu is a result of the solid polishing particles used in
the slurry and there is no disclosure, teaching or suggestion
of the need for any external polishing member. Thus, even
assuming arguendo that CMP conventionally employs an external
polishing member with a polishing solution, the particular CMP
technique of Sandhu does not disclose or suggest use of such
an external polishing member.
The examiner states that “Maniar is not relied upon to
teach conventional polishing techniques.” Answer, page 5.
Maniar has only been relied upon for teaching a method of
etching a ferroelectric material with an etchant comprising
both an acid and an oxidizing agent (in water) with the
advantages of etching uniformly with removal of chemical
residues simultaneously with the dielectric film (Answer, page
5
Page: Previous 1 2 3 4 5 6 7 8 9 10 Next
Last modified: November 3, 2007