Ex parte KANNO - Page 2




                Appeal No. 1999-1630                                                                                                       
                Application No. 08/784,775                                                                                                 


                logic (CML) level signal to a MOS level signal.  This is said to permit a level conversion circuit which                   

                operates at high speed even at a low power-supply voltage.                                                                 

                Representative independent claim 1 is reproduced as follows:                                                               

                        1.  A level conversion circuit comprising:                                                                         

                        a first bipolar transistor having a base supplied with a first reference voltage;                                  

                        a first resistor having a first end connected to a first potential line and a second end connected                 
                to the emitter of said first bipolar transistor;                                                                           

                        a second resistor having a first end connected to a second potential line and a second end;                        

                        a third resistor having a first end connected to said second potential line and a second end;                      

                        a first MOS transistor of a first channel type having a gate coupled to an input terminal, a                       
                source coupled to the collector of said first bipolar transistor and a drain coupled to the second end of                  
                said second resistor;                                                                                                      

                        a second MOS transistor of said first channel type having a gate supplied with a second                            
                reference voltage, a source coupled to the collector of said first bipolar transistor and a drain coupled                  
                to the second end of said third resistor;                                                                                  

                        a third MOS transistor of a second channel type having a gate directly connected to the drain of                   
                said first MOS transistor, a source coupled to said second potential line and a drain;                                     

                        a fourth MOS transistor of said second channel type having a gate directly connected to the                        
                drain of said second MOS transistor, a source coupled to said second potential line and a drain;                           

                        a fifth MOS transistor of said first channel type having a gate coupled to the drain of said fourth                
                MOS transistor, a drain coupled to the drain of said fourth MOS transistor and a source coupled to a                       
                third potential line;                                                                                                      

                        a sixth MOS transistor of said first channel type having a gate coupled to the gate of said fifth                  

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