Appeal No. 1999-2584
Application No. 08/562,988
connected between the gate node and the source node, such
resistance providing for continuous discharge of voltage
accumulated on the gate-source capacitance.
Claim 7 is illustrative of the invention and reads as
follows:
7. An electrically protected MOSFET consisting
essentially of:
a MOSFET device having a gate node, a source
node and a drain node; and
a resistance connected between the gate node and
the source node.
The Examiner relies on the following prior art:
Phipps et al. (Phipps) EP 0 372 820 A2 Jun. 13, 1990
(published European patent application)
Claims 7-12 stand rejected under 35 U.S.C. § 103(a) as
being unpatentable over Phipps.
Rather than reiterate the arguments of Appellants and the
Examiner, reference is made to the Brief (Paper No. 20) and
Answer (Paper No. 21) for the respective details.
OPINION
We have carefully considered the subject matter on
appeal, the rejection advanced by the Examiner, the arguments
in support of the rejection, and the evidence of obviousness
2
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