Appeal No. 2000-0465
Application 08/826,110
or more semiconductor materials, an electron conducting region in or constituting the
base, and an ohmic contact of a palladium layer, a barrier layer, and a gold layer on top.
Specification, page 4, lines 8-13. The palladium layer is in contact with the base.
Specification, page 4, lines 13-14.
Representative claim 1 reads as follows:
1. A semiconductor electronic device comprising a semiconduc tor base; an electron
conducting region disposed in or constituting said base; and an ohmic contact disposed
on said base, said ohmic contact comprises Pd/barrier/Au layers, with said palladium
layer being in contact with said base.
In rejecting Appellant’s claims, the Examiner relies on the following references:
Calawa et al. (Calawa) 4,952,527 Aug. 28, 1990
Hatano et al. (Hatano) 5,740,192 Apr. 14, 1999
(Filed Dec. 17, 1996)
Claims 1, 7 and 13 stand rejected under 35 U.S.C. § 102 as being anticipated by
Calawa. Claims 1-5, 7-11 and 13-16 stand rejected under 35 U.S.C. § 103(a) as obvious
over Calawa and Hatano.
Rather than repeat the arguments of Appellant and Examiner, we refer the reader
to the Appellant’s Briefs1 and Examiner’s Answer2 for the respective details thereof.
OPINION
With full consideration being given the subject matter on appeal, the Examiner’s
rejection and the arguments of Appellant and Examiner, for the reasons stated infra, we
will reverse the Examiner’s rejection of claims 1, 7 and 13 under 35 U.S.C. § 102 as
1 Appellant filed an Appeal Brief on May 18, 1999. Appellant filed a Reply Brief on August 27, 1999.
Appellant also filed an appendix and response on 8/24/2001 addressing the Examiner’s directive.
2
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