Appeal No. 2000-0465
Application 08/826,110
Pd/barrier/Au, but instead teaches away to an electrode consisting of an alloy or a
laminate comprising metal(s) selected from Si and Cr, and metal(s) selected from Ti and
Au.
In Hatano, the teaching of a Pd/Ti/Pt/Au electrode is for a p-type base
semiconductor device. It would be improper to use the teaching of metallization
composition for a p-type semiconductor material such as in Hatano and transfer such
teaching to implement for the metallization composition of an n-type semiconductor
material as in Calawa. Furthermore, Hatano specifically teaches away from using such a
Ti/Pt composition for an electrode formed on an n-type layer:
As for the electrode, it is also possible, if the electrode is to be formed on the p-
type layer, to employ an electrode consisting of an alloy or a laminate comprising
a metal or metals selected from Pt, Pd,, In, Mg and Ti, and a metal or metals
selected from Ni and Au. On the other hand, if the electrode is to be formed on
the n-type layer, it is possible to employ an electrode consisting of an alloy or a
laminate comprising a metal or metals selected from Si and Cr, and a metal or
metal is selected Ti and Au.
Hatano, column 17, lines 43-51.
Therefore, we find that Calawa in view of Hatano does not teach or suggest
Appellant’s claim limitation of “Pd/barrier/Au layers” as recited in claims 1, 7 and 13. In
view of the foregoing, we conclude that the Examiner has failed to establish a prima
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