Appeal No. 2001-0228
Application No. 09/116,612
forming upon the blanket first silicon layer a blanket
silicon containing dielectric layer;
forming upon the blanket silicon containing dielectric
layer a blanket second silicon layer;
forming upon the blanket second silicon layer a blanket
organic polymer anti-reflective coating (ARC) layer;
forming upon the blanket organic polymer anti-reflective
coating (ARC) layer a patterned photoresist layer; and
etching sequentially while employing the patterned
photoresist layer as a photoresist etch mask layer the blanket
organic polymer anti-reflective coating (ARC) layer, the
blanket second silicon layer, the blanket silicon containing
dielectric layer and the blanket first silicon layer to form a
patterned composite stack layer comprising a patterned second
silicon layer coextensive with a patterned silicon containing
dielectric layer in turn coextensive with a patterned first
silicon layer, where the sequential etching is undertaken
employing a single plasma etch method employing an etchant gas
composition which upon plasma activation forms a chlorine
containing etchant species.
The examiner relies upon the following references as
evidence of obviousness:
Kolar et al. (Kolar) 5,162,259 Nov. 10, 1992
Azuma et al. (Azuma) 5,759,746 Jun. 02, 1998
Huang et al. (Huang) 5,837,428 Nov. 17, 1998
According to appellant, "[t]he present invention provides
a method for efficiently and with attenuated microloading
effect forming within a microelectronics fabrication a
patterned composite silicon/dielectric/silicon stack layer"
(page 3 of Brief, penultimate paragraph). The claimed method
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