Ex Parte HSU et al - Page 3



         Appeal No. 2001-0776                                                       
         Application 09/276,043                                                     

              The following references are relied on by the examiner as             
         evidence of unpatentability:                                               

         Chow et al. (Chow)            4,847,111      July 11, 1989                 
         Mendonca et al. (Mendonca)    4,749,597      June  7, 1988                 
         Urquhart et al. (Urquhart)    5,264,070      Nov. 23, 1993                 
         Contreras et al. (Contreras) 5,556,506       Sep. 17, 1996                 
         Suehiro et al. (Suehiro)      5,719,410      Feb. 17, 1998                 
         Ek et al. (Ek)               5,759,898      June  2, 1998                 

              Claims 1, 2, 4, 11, 12, and 14 stand rejected under                   
         35 U.S.C. § 103 as being unpatentable over Contreras in view of            
         Urquhart, Ek, Mendonca, and further in view of Suehiro.                    
              Claims 11, 13 and 14 stand rejected under 35 U.S.C. § 103             
         as being unpatentable over Chow in view of Mendonca.                       

                                      OPINION                                       
         I.  The rejection of claims 1, 2, 4, 11, 12, and 14                        
              We consider claim 1 in this rejection and note that                   
         appellants argue claim 11 for the same reasons provided for claim          
         1 (brief, page 5).                                                         
              The examiner finds that Contreras in view of Urquhart teach           
         the steps set forth in appellants’ claim 1 except for a thickness          
         of less than 5nm (for the silicon layer in step (b)), utilizing            
         CVD as the method for depositing the tungsten layer of step (d),           
         and the tunneling thickness of the silicon nitride layer of step           
         (c).  The examiner relies upon the secondary references of Ek,             
         Mendonca, and Suehiro for teaching these other aspects of                  
         appellants’ claimed subject matter.  See pages 4-6 of the answer.          


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