Ex Parte TAKAHASHI et al - Page 2



          Appeal No. 2001-2039                                                         
          Application No. 09/110,207                                                   

                                      BACKGROUND                                       
               Appellants’ invention is directed to a structure and a                  
          method for manufacturing of an electrostatic chuck that holds a              
          semiconductor substrate during wafer processing.  The chuck                  
          includes two insulated electrodes connected to the opposite poles            
          of a power supply which causes a semiconductor substrate to be               
          electrostatically attracted to the top surface of the chuck.                 
               Representative independent claim 3 is reproduced below:                 
                    3.   An electrostatic chuck for holding a substrate                
               comprising:                                                             
                    a first electrode having a recess therein;                         
                    an insulating layer formed over a part of the first                
               electrode surface which is in the recess;                               
                    a second electrode provided in the recess of the first             
               electrode; and                                                          
                    an electrostatic attraction layer formed over the                  
               surface of the first electrode and the second electrode                 
               which is provided in the first electrode;                               
                    wherein a voltage is applied to the first electrode and            
               the second electrode to electrostatically attract the                   
               substrate; and                                                          
                    wherein the insulating layer formed in the recess of               










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