Ex Parte RODRIGUEZ et al - Page 5




          Appeal No. 2001-2660                                                        
          Application 09/392,341                                                      


               Likewise, from our independent study of both references, we            
          can derive no independent motivation from them for the                      
          combination.  The examiner's reasoning of the combination at the            
          top of page 4 of the examiner's answer of achieving benefits                
          taught by Magee of eliminating the inherently mix-match of the              
          switching between the individual field effect transistors in                
          preventing erroneous operation of the half-latch of appellants'             
          prior art Figure 1 appears to us to be more conclusory than to              
          set forth a rationale within the art from the artisan to                    
          appreciate.  Moreover, the examiner's additional rationale                  
          appears to recognize a certain identity of the structure of                 
          appellants' disclosed invention represented in Figure 2 and the             
          latter portion of Magee's Figure 1, but this rationale indirectly           
          reflects the apparent prohibited hindsight analysis of the                  
          examiner.                                                                   
               We also reverse the rejection of independent claims 1, 4, 5            
          and 8 on appeal for an additional reason.  Each of these                    
          independent claims on appeal in part recites that the "CMOS"                
          inverter comprise a "nMOSFET" transistor.  The examiner's                   
          rationale at page 3 of the answer wrongly asserts that prior art            
          Figure 1 shows a switching circuit comprising a CMOS inverter               
          within the block element 110 comprising such an "nMOSFET"                   

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