Ex Parte YEH et al - Page 1




               The opinion in support of the decision being entered                   
               today was not written for publication in a law journal                 
               and is not binding precedent of the Board.                             
                                                               Paper No. 14           


                      UNITED STATES PATENT AND TRADEMARK OFFICE                       
                                                                                     
                         BEFORE THE BOARD OF PATENT APPEALS                           
                                  AND INTERFERENCES                                   
                                                                                     
                                 Ex parte EDWARD YEH                                  
                                         and                                          
                                   OLIVIER LAPARRA                                    
                                                                                     
                                Appeal No. 2002-0498                                  
                             Application No. 09/441,899                               
                                                                                     
                                      ON BRIEF                                        
                                                                                     

          Before KIMLIN, LIEBERMAN and POTEATE, Administrative Patent                 
          Judges.                                                                     
          KIMLIN, Administrative Patent Judge.                                        



                                 DECISION ON APPEAL                                   
               This is an appeal from the final rejection of claims 1-20,             
          all the claims in the present application.  Claim 1 is                      
          illustrative:                                                               
               1.  A method for forming a transistor gate structure                   
          comprising the following steps:                                             

                                         -1-                                          





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