Ex Parte Yamada - Page 5




          Appeal No. 2002-0697                                                         
          Application No. 09/625,857                                                   

               To operate the S1 diffusion apparatus, a quartz boat 24                 
          containing untreated wafers W is mounted on the lid body 26 and              
          the lid body is raised to lift the boat 24 and wafers W into the             
          process tube 21 and to close the bottom of the tube.                         
          Subsequently,                                                                
               [a]ir is evacuated from within the process tube 21                      
               through the exhaust openings [25] and the process tube                  
               21 is also heated to the prescribed temperature of                      
               between 900° C. and 1200° C. by the heater 22.                          
               Reaction gas is then introduced into the process tube                   
               21 from the reaction gas introduction pipe 33.  The                     
               reaction gas is supplied to the semiconductor wafers W                  
               . . . from the plurality of supply orifices 34 drilled                  
               in the reaction gas introduction pipe 33.  A gas such                   
               as POCl3 or O2 is used as the reaction gas to diffuse                   
               phosphorous into the semiconductor wafers W.  The                       
               apparatus is then evacuated through the exhaust                         
               openings 25 by an exhaust apparatus, to exhaust both                    
               excess reaction gas and also any reaction products.                     
                    At this point, a circulation gas such as N2 or Ar                  
               is supplied from the circulation gas introduction                       
               opening 42 to the circulation path 41 for circulation                   
               gas provided in the lid body 26.  The circulation gas                   
               is heated to the vaporization temperature of the                        
               reaction products, from 100° C. to 150° C., passes from                 
               the circulation gas introduction opening 42, through                    
               inner surface portion 41b of the circulation path 41                    
               formed . . . along the gap 41a by the shaft 38                          
               connected to the motor shaft, and is exhausted from the                 
               circulation gas exhaust opening 43.  Therefore, the                     
               inner wall portion of the lid body 26 by the process                    
               tube 21 is heated to between 100 C. and 200 C., to                      
               ensure that reaction products do not adhere to the lid                  
               body 26.  Circulation gas that does not exhaust from                    
               the circulation gas exhaust opening 43 passes through                   
               the gap 44 . . . and is discharged from the exhaust                     
               openings 25.  The gap 44 is arranged so as to bend, so                  
               that reaction components such as Cl2 and HCl that are                   
               generated in the process tube 21 do not intrude toward                  

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