Appeal No. 2003-0626
Application No. 09/410,896
Grounds of Rejection
1. Claim 12 stands rejected under 35 U.S.C. § 112, second
paragraph.
We affirm.
2. Claims 16, 18 and 20 stand rejected under 35 U.S.C.
§ 102(e), as anticipated by Flanigan.
We affirm.
3. Claims 1-3, 5, 8-10, 12-16 and 18-20 stand rejected under
35 U.S.C. § 103, as unpatentable over by Moslehi.
We reverse.
Background
During a multi-layer deposition process, a semiconductor
substrate is frequently processed in several sputter chambers.
Specification, page 3, lines 15-16. The processing temperatures
for the various sputtering processing may vary significantly.
Id., page 4, lines 3-4. Thus, it may be necessary to conduct a
rapid cool-down process to reduce the temperature of the
semiconductor substrate during two sputtering processes. Id. at
lines 6-7. In order to reduce the substrate temperature, a cool-
down chamber may be utilized wherein the bottom surface of the
wafer is cooled via a cooling fluid in the wafer pedestal and the
top surface of the wafer is cooled by a cooling gas circulated
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