Ex Parte McQueen - Page 9




                 Appeal No. 2003-1367                                                                                                             
                 Application No. 09/640,237                                                                                                       
                 based on Nguyen, Nakamura, and Maari and claim 6 under 35 U.S.C. § 103(a) based on Nguyen,                                       
                 Nakamura, and appellant's admitted prior art (Figs. 35-38, page 4, lines 26-29, and page 5, lines                                
                 1-5).  We find that claims 3, 4, and 6 depend from claim 1 and incorporate the limitations of                                    
                 claim 1 by reference.   We note that appellant does not provide separate arguments as to claims                                  
                 3, 4, or 6 beyond the arguments directed to the ground of rejection of claim 1.  Because we find                                 
                 that it was not improper to combine Nguyen with Nakamura under 35 U.S.C. § 103(a) we sustain                                     
                 the rejection of claims 3, 4, and 6 as well.                                                                                     
                         We now turn to the examiner's decision rejecting claims 8 and 9 over Nakamura,                                           
                 Takebuchi, and appellant's admitted prior art (Figs. 35-38, page 4, lines 26-29, and page 5, lines                               
                 1-5).  The examiner admits that the limitation "planarizing said first barrier layer to expose said                              
                 at least one transistor gate member" is not taught in Nakamura.  (Answer, page 9.)  Takebuchi is                                 
                 cited to overcome this deficiency in Nakamura.  Takebuchi teaches planarizing a dielectric layer                                 
                 6 down to the surface of the gate electrode 4 in order to improve contact resistance between the                                 
                 gate electrode 4 and a contact wiring layer 11 formed on the gate electrode (Takebuchi, Fig. 1).                                 
                 We do not see how it would be possible to planarize the dielectric layer 8 in Nakamura all of the                                
                 way down to the surface of the gate electrodes 4 as would be required to meet the "to expose"                                    
                 limitation without destroying the adjacent conductor lines 6 which are elevationally above the                                   
                 gate electrodes 4 and would appear to be all but entirely removed before the planarization could                                 
                 "expose" the upper surface of the gate electrode.  It is impermissible under 35 U.S.C. § 103(a) to                               
                 combine references where the proposed modification would render the prior art unsatisfactory                                     
                 for                                                                                                                              
                 its intended purpose.  In re Gordon, 733 F.2d at 902, 221 USPQ at 1127.  Accordingly, the                                        
                 rejection of claims 8 and 9 over Nakamura, Takebuchi, and appellant's admitted prior art (Figs.                                  
                 35-38, page 4, lines 26-29, and page 5, lines 1-5) is reversed.  All of the grounds of rejection that                            
                 are applied to claims 9 through 11 and 14 through 17 are likewise reversed since each of these                                   
                 grounds rely on the propriety of the combination of Nakamura and Takebuchi in the manner                                         
                 asserted with respect to claim 8.                                                                                                
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