Appeal No. 2004-0652
Application No. 09/396,642
superseding rejections of the claims. In response, the
appellants filed a second supplemental brief (Paper No. 13) and
again requested that the appeal be reinstated. The examiner then
entered an answer (Paper No. 14), noted a reply brief (Paper No.
15) filed by the appellants and forwarded the application to this
Board for review of the current rejections of claims 1 through
12. Claims 13 through 15, the only other claims pending in the
application, stand withdrawn from consideration.
THE INVENTION
The invention relates to “semiconductor device fabrication
and processing” (specification, page 1). Representative claims 1
and 9 read as follows:
1. A method of forming an electrically conductive structure
insulatively spaced from a second structure, said method
comprising the steps of:
providing said second structure;
forming an electrically insulative layer on said second
structure;
forming on said electrically insulative layer and spaced
form [sic, from] said second structure an unoxidized electrically
conductive structure of a material that remains substantially
conductive in the oxidized state; and
then subjecting said electrically conductive structure and
said electrically insulative layer to an ozone containing
atmosphere for a duration of time and at a first temperature
sufficient to oxidize said unoxidized electrically conductive
structure.
9. A method of forming a capacitor over a semiconductor
substrate, said method comprising the steps of:
providing a first electrically conductive electrode on said
semiconductor substrate;
2
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