Ex Parte KUGLER - Page 11




                Appeal No. 2004-2148                                                                           
                Application No. 09/362,397                                                                     
                method for applying silicon nitride as a protective layer.  We agree with the                  
                Examiner, Answer page 18, that a person of ordinary skill in the art would                     
                have recognized the suitable methods for applying a silicon nitride layer in                   
                an information carrier, including the method disclosed in Kim.  We note                        
                that Appellant, Reply Brief page 3, asserts that refractive index is a                         
                characteristic of the layer material and not the layer thickness.  There is no                 
                dispute that both Challener and Kim disclose SiN materials that fall within                    
                the scope of the claimed invention.  Consequently, Appellant’s argument                        
                regarding the degree of refraction for the intermediate layer of an                            
                information carrier is not persuasive.  Furthermore, the Appellant has not                     
                directed us to evidence that the method of applying the SiN layer                              
                produces unexpected results.                                                                   
                       Appellant argues that Challener differs from the present invention in                   
                that silicon nitride must be selected from a list of other possible candidates                 
                for the intermediate layer.  (Reply Brief, p. 2; Brief, p. 22).  Appellant’s                   
                argument is not persuasive.  The person of ordinary skill in the art would                     
                have recognized that each of the materials disclosed in Challener would                        
                have been suitable for the intermediate layer including silicon nitride.                       




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