Appeal No. 2005-2239
Application No. 10/448,905
BACKGROUND
The present invention relates to a method for plasma
etching a dielectric material, such as doped silicon dioxide.
According to Appellants, the claimed etching process provides
having high aspect ratio structures in oxide, nitride and anti-
reflective films layered on semiconductor substrates. (Brief,
p. 3).
Representative claim 1, as presented in the Brief, appears
below:
1. A method for plasma etching a dielectric
material, comprising:
providing a semiconductor substrate having the
dielectric material formed thereover;
applying a mask over the dielectric material so
as to leave at least one aperture in the mask
through which a surface of the dielectric
material is exposed;
disposing the semiconductor substrate in a plasma
etch chamber; and
generating a carbon monoxide-devoid gas plasma
comprising CHF3 and CH2F2 into an area proximate
the at least one aperture.
2
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