Ex Parte Hall et al - Page 3


             Appeal No. 2006-0375                                                                                     
             Application 10/447,581                                                                                   

             § 103(a).  Indeed, none of the disclosures in Moise that teach the use of a fluorine-based plasma        
             etch on which the examiner relies, is the last etch step of the last layer on a semiconductor wafer      
             in the formation of an at least two layer material stack in which a hard mask is the top layer, or       
             otherwise constitute a step of etching a completed material stack on a semiconductor wafer.  See         
             Moise, e.g., [0036] through [0040], [0063] through [0067], [0069], [0072] and [0088] through             
             [0106];  FIG. 2, particularly 204 through 216;  FIG. 3b-c;  and FIG. 4a-h.                               
                    On this record, we further agree with appellants that the secondary references coupled            
             with the primary reference would not have resulted in the claimed method.  Indeed, the examiner          
             has relied on these references only “to teach removing contaminants from the wafer surface               
             using other conventional wet cleaning solutions” (answer, pages 8-9).                                    
                    Accordingly, in the absence of a prima facie case of anticipation and a prima facie case          
             of obviousness, we reverse the grounds of rejection on appeal.                                           
                    The examiner’s decision is reversed.                                                              
                                                     Other Issues                                                     
                    A comparison of the appealed claims with such disclosure of Moise as that at, e.g.,               
             [0038] through [0040], [0069] and [0072], raises the issue with respect to § 103(a), whether one         
             of ordinary skill in this art would have substituted a fluorine-based plasma etch for the wet etch       
             process using fluorine or fluorine-chlorine chemistries followed by a wet clean step, which can          
             also etch the substrate, to clean a semiconductor wafer having a material stack.  See B.F.               
             Goodrich Co. v. Aircraft Braking Sys. Corp., 72 F.3d 1577, 1582, 37 USPQ2d 1314, 1318 (Fed.              
             Cir. 1996) (“When obviousness is based on a particular prior art reference, there must be a              
             showing of a suggestion or motivation to modify the teachings of that reference. [Citation               
             omitted.] This suggestion or motivation need not be expressly stated. [Citation omitted.]”).             
             However, this issue has not been considered on the record and should be addressed by the                 
             examiner upon further consideration of the appealed claims subsequent to the disposition of this         
             appeal.                                                                                                  
                    We agree with the examiner that the objection to the “Figure 3” filed September 14,               
             2004, and the accompanying amendment to page 8 of the specification, filed October 8, 2004, as           
                                                                                                                      
             3  See, e.g., “plasma etching,” McGraw-Hill Dictionary of Scientific and Technical Terms 1251            


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