Appeal No. 2006-1871 Παγε 2
Application No. 10/245,442
29. A method for processing a substrate,
comprising:
introducing one or more precursors into a chemical
vapor deposition chamber through a gas distribution
plate heated by a heating mechanism disposed at a
bottom plate of the gas distribution plate, wherein the
heating mechanism comprises a heating element or a high
temperature heat exchanger fluid;
reacting the precursors to deposit a material on a
substrate surfaces;
removing the substrate from the chamber;
introducing a cleaning gas into the chamber
through the gas distribution plate; and
reacting the cleaning gas with deposits within the
chamber until substantially all the deposits are
consumed.
The prior art references of record relied upon by the
examiner in rejecting the appealed claims are:
Mandrekar et al (Mandrekar) 6,117,245 Sep. 12, 2000
Nguyen 6,565,661 May 20, 2003
(filed Jun. 04, 1999)
Ameen et al. (Ameen) 6,635,569 Oct. 21, 2003
(filed Apr. 20, 1999)
Satoh et al. (Satoh) EP 1 118 692 Jul. 25, 2001
Claims 13, 15, 29, and 31 stand rejected under 35 U.S.C.
§ 103(a) as being unpatentable over Nguyen in view of Ameen and
Mandrekar. Claims 21 and 23 stand rejected under 35 U.S.C.
§ 103(a) as being unpatentable over Nguyen in view of Ameen,
Satoh and Mandrekar.
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