Ex Parte Ahn et al - Page 4

                 Appeal 2007-1295                                                                                     
                 Application 10/109,713                                                                               
                 knowledge was in the art, the examiner could then properly rely, as put forth                        
                 by the solicitor, on a conclusion of obviousness ‘from common knowledge                              
                 and common sense of the person of ordinary skill in the art without any                              
                 specific hint or suggestion in a particular reference.’”); In re Hoeschele,                          
                 406 F.2d 1403, 1406-07, 160 USPQ 809, 811-812 (CCPA 1969) (“[I]t is                                  
                 proper to take into account not only specific teachings of the references but                        
                 also the inferences which one skilled in the art would reasonably be                                 
                 expected to draw therefrom...”).  The analysis supporting obviousness,                               
                 however, should be made explicit and should “identify a reason that would                            
                 have prompted a person of ordinary skill in the art to combine the elements”                         
                 in the manner claimed.  KSR, 127 S.Ct. at 1731, 82 USPQ2d at 1389.                                   
                        As evidence of obviousness of the claimed subject matter under § 103,                         
                 the Examiner has relied on the disclosures of Chen in view of Lopatin, the                           
                 APA and Kikkawa (Answer 3-6).                                                                        
                        Chen teaches forming low dielectric layer 204 on copper line 202,                             
                 forming dual damascene including barrier 212 and copper 214/216. (See col.                           
                 3, l. 32 to col. 5, l. 35 and Fig. 2D).  Chen discloses the barrier layer 212 is                     
                 formed using a material that can prevent copper atoms from diffusing into                            
                 the inter-metal dielectric layer 204 (Col. 3, ll. 47-51).  Chen does not                             
                 describe the use of methylsilsesquiazane as dielectric material and tungsten                         
                 nitride as the barrier layer.                                                                        
                        Lopatin describes an improved interconnect structure including                                
                 improved barrier and seed layers as well as the method of forming these                              
                 structures and layers to overcome recognized drawbacks existing in the                               
                 processing of copper interconnect formation.  These drawbacks include                                
                 difficulties in forming seed and barrier layers in vias and trenches having                          

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