Ex Parte Kanda - Page 2

              Appeal 2007-2179                                                                     
              Application 10/247,825                                                               




              through electromagnetic force, and a high-frequency power source 9 for               
              supplying a high-frequency current to the induction coil (claim 8, Fig. 1).          
                    Representative claims 8, 9, 10, and 12 read as follows:                        
                    8.  A manufacturing apparatus of a semiconductor integrated circuit,           
              which passes a current through a target plating surface of a semiconductor           
              substrate, provided on a plating liquid, so as to provide a bump electrode on        
              the semiconductor substrate by electrolytic plating method, the                      
              manufacturing apparatus comprising:                                                  
                    a positive electrode which is provided in a tank section for storing the       
              plating liquid,                                                                      
                    a negative electrode which is connected to the target plating surface of       
              the semiconductor substrate;                                                         
                    an induction coil for causing the semiconductor substrate to vibrate           
              through electromagnetic force; and                                                   
                    a high-frequency power source for supplying a high-frequency current           
              to the induction coil.                                                               
                    9.  The manufacturing apparatus of the semiconductor integrated                
              circuit according to claim 8, wherein the semiconductor substrate vibrates at        
              an audio frequency.                                                                  
                    10.  The manufacturing apparatus of the semiconductor integrated               
              circuit according to claim 8, wherein the induction coil is provided outside         
              the tank section.                                                                    
                    12.  The manufacturing apparatus of the semiconductor integrated               
              circuit according to claim 8, wherein the high-frequency power source can            
              vary an amplitude and a frequency of an alternating current to be supplied.          


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