Appeal No. 95-0347
Application 08/056,681
Reference relied on by the Examiner
Muraoka 4,654,679 Mar. 31, 1987
The Rejections on Appeal
Claims 1, 2, 4, 5, 7, 12 and 13 stand finally rejected under
35 U.S.C. § 102(b) as being anticipated by Muraoka.
The appellants have grouped all rejected claims together as
standing and falling with independent claim 1. (Br. at 2).
Claim 13, as amended in Paper No. 4, no longer depends from
claim 11 as is reproduced in the appellants’ Appendix filed with
the appeal brief, but depends from claim 12 instead.
The Invention
The invention is directed to a field effect transistor
wherein the gate has a varying doping level where it abuts the
channel region in the direction from the source region to the
drain region. Claim 1 is the only independent claim on appeal in
the application and is reproduced below:
1. A field effect transistor, comprising:
(a) a source region in a semiconductor layer;
(b) a drain region in said semiconductor layer;
(c) a gate region in said semiconductor layer and
between said source region and said drain region;
2
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