Appeal No. 95-4622
Application 08/113,665
canceled claims 1 to 22, 30 and 39. Claims 33 to 38, 40 and 41
stand withdrawn. The examiner has allowed claims 24 to 29 and
claims 31 and 32. As a result of withdrawing another rejection,
the examiner has also allowed claims 42 to 45. Thus, claims 23
and 46 to 49 remain for decision on appeal.
Representative claim 23 is reproduced below:
23. A semiconductor device comprising:
a semiconductor substrate having a principal surface; and,
a plurality of multilayer wirings each having a length and a
width which extend along and parallel said principal surface of
said semiconductor substrate, each of said multilayer wirings
including opposite side surfaces each extending perpendicular to
said principal surface of said semiconductor substrate, said
opposite side surfaces each including recessed portions located
at spaced apart predetermined length intervals of each multilayer
wirings is decreased at each of said spaced apart predetermined
length intervals, the length of each of the recessed portions
being less than 0.5Fm;
each of said multilayer wirings including a laminate of a
first conductive low melting point layer formed of at least
aluminum and a second conductive high melting point layer.
The following references are relied on by the examiner:
Sliwa et al. (Sliwa) 4,847,674 Jul. 11, 1989
Okuyama 4,898,840 Feb. 06, 1990
Kumagai et al. (Kumagai) 4,941,031 Jul. 10, 1990
Amazawa et al., (Amazawa), “Selective Growth of Aluminum Using a
Novel CVD System,” IEDM, vol. 88, pp. 442-445 (1988).
Claim 23 stands rejected under 35 U.S.C. § 103 as being
obvious over Sliwa alone. Claims 46 to 49 stand rejected under
2
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