Appeal No. 95-3557
Application No. 07/833,417
APPENDIX
1. A process for forming silicon material having a boss section and a flexure
section, said boss section thicker than said flexure section, said process comprising the
steps of:
providing a substrate of one type doped silicon material;
diffusing another type dopant material into said substrate so as to provide
another type doped silicon material at a depth (x-y) from a surface of said one type
doped silicon material, said diffusing located only in the regions of the boss section,
where x is the boss section thickness and y is the flexure section thickness;
epitaxially growing a layer of said another type doped silicon on said substrate
to said flexure section thickness y over the surface of said substrate; and
etching away one type doped silicon material with a one type doped silicon
etchant leaving said boss section having a thickness x and said flexure section having a
thickness y.
2. A method of chemical machining of silicon material to provide a boss section
joined by a flexure section from a substrate of p-type doped silicon material, said boss
section thicker than said flexure section, said method comprising the steps of:
diffusing n-type dopant material into said substrate so as to provide an n-type
material at a depth (x-y) from a surface of the p-type material, said diffusing being
provided only in the regions of the boss section, where x is the boss section thickness
and y is the flexure section thickness;
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