Appeal No. 95-3557
Application No. 07/833,417
epitaxially growing a layer of n-type doped silicon on said substrate to said
flexure section thickness y; and
etching away p-type doped silicon material with a p-type doped silicon etchant
leaving said boss section having a thickness x and said flexure section having a
thickness y.
10. A method of chemical machining of silicon material with a boss section
joined by a flexure section from a substrate of boron doped silicon material having a
resistivity of from 4 to 6 ohms-cm, said boss section thicker than said flexure section,
said method comprising the steps of:
(1) providing a mask of silicon dioxide on said substrate over said flexure
section;
(2) diffusing phosphorus dopant material into said substrate so as to provide a
phosphorus doped silicon material at a depth (x-y) from a surface of the substrate, said
diffusing being provided only in the regions of the boss section, where x is the boss
section thickness and y is the flexure section thickness, said diffusing step including the
steps of:
implantation of phosphorus dopant ions in said substrate; and
annealing said substrate so as to eliminate crystal lattice defects and to at least
partially diffuse said phosphorus dopant ions;
(3) epitaxially growing a layer of phosphorus doped silicon on said substrate to
said flexure section thickness y over the surface of the boron doped silicon substrate
and the areas of diffusion phosphorus doped silicon; and
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Last modified: November 3, 2007