Appeal No. 95-3557
Application No. 07/833,417
13. A flexure section in accordance with claim 12, wherein said diffusing step
includes, prior to said implantation step, the step of masking said substrate so as to
prevent ion implantation in those areas of said flexure section.
14. A flexure section in accordance with claim 13, wherein said substrate is
boron doped silicon, wherein said masking step includes providing a mask of silicon
dioxide, said ion implantation step includes the step of implanting phosphorus ions.
15. A flexure section in accordance with claim 11, wherein said growing step
includes the step of epitaxially growing phosphorus doped silicon.
16. A flexure section in accordance with claim 15, wherein said growing step
includes the step of epitaxially growing phosphorus doped silicon having a resistivity of
between 0.6 to 1.0 ohms-cm.
17. A flexure section in accordance with claim 11, wherein said etching step
includes the step of electrochemical etching said substrate with at least potassium
hydroxide (KOH).
18. A flexure section in accordance with claim 14, wherein said boron doped
silicon material has a resistivity of between 4-6 ohm-cm.
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Last modified: November 3, 2007