Appeal No. 96-1207
Application No. 08/064,203
an annealed silicon dioxide tunneling layer having a
thickness less than 2000 Anstroms formed on top of said
conductive layer, said silicon dioxide layer being formed by
low pressure chemical vapor deposition comprising the use of
tetraethylorthosilicate;
a second conductive layer formed on top of said silicon
dioxide layer, said first conductive layer acting as a source
of tunneling electrons under an appropriate voltage bias
condition, said second conductive layer serving as the
receptor of said tunneling electrons.
The references relied on by the examiner are:
Sato 4,720,323 Jan. 19, 1988
Hazani 4,763,299 Aug. 9, 1988
Korma et al. (Korma), "Si0 Layers on Polycrystalline Silicon,"
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Insulating Films on Semiconductors, Proceedings of the
International Conference, Elsevier Science Publishers, 1983,
pages 278 through 281.
Claims 13, 14, 16, 17 and 19 through 25 stand rejected
under 35 U.S.C. § 102(b) as being anticipated by Hazani.
Claims 13, 14, 16, 17 and 19 through 25 stand rejected
under 35 U.S.C. § 103 as being unpatentable over Sato in view
of Korma.
Reference is made to the briefs and the answer for the
respective positions of the appellant and the examiner.
OPINION
All of the rejections are reversed.
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