Appeal No. 96-4103
Application 08/363,479
from the examiner’s final rejection of claims 1-12 and 21-24,2
which constitute all the claims remaining in the application.
The disclosed invention pertains to an emitter structure
of a heterojunction bipolar transistor (HBT). Such transistors
typically have an emitter layer of AlGaAs adjacent to a base
layer of GaAs. The invention specifically is directed to an
emitter layer of Al Ga As wherein x>0.5. This value of x is said
x 1-x
to improve the operation of a HBT by permitting the emitter layer
to act as a ballast resistor as well as the active emitter for
the transistor.
Representative claim 1 is reproduced as follows:
1. An emitter structure for a bipolar transistor, said
structure comprising an emitter layer of Al Ga As, where x>0.5,
x 1-x
adjacent a base layer whereby said emitter layer acts as a
ballast resistor and as the active emitter for said transistor.
The examiner relies on the following references:
Yokoyama et al. (Yokoyama ’724) 4,617,724 Oct. 21, 1986
Ohshima 4,924,283 May 08, 1990
Shimura 5,212,103 May 18, 1993
(filed Sep. 20,
1991)
Yokoyama (Japanese Kokai) 62-036861 Feb. 17, 1987
2Neither the final rejection nor the examiner;s answer givers the
basis for rejecting claim 9.
2
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