Appeal No. 1997-0988
Application No. 08/199,910
DECISION ON APPEAL
This is a decision on appeal from the examiner's final
rejection of claims 26 through 31, 33, 34, 36 through 44, 46,
47, 49 and 52, which are all of the claims pending in this
application. In the Appeal Brief (page 3), appellants state
that they do not appeal the rejection of claim 49.
Accordingly, only claims 26 through 31, 33, 34, 36 through 44,
46, 47 and 52 are before us on appeal.
The appellants' invention relates to semi-insulating
doped indium phosphide (InP) and devices made therefrom.
Claim 52 is illustrative of the claimed invention, and it
reads as follows:
52. An optoelectronic device or a laser device, said
device comprising a substrate, first and second active regions
of said device, and a region of semi-insulating indium
phosphide based material formed on said substrate and
electrically isolating said first active region from said
active region wherein said region of semi-insulating indium
phosphide based material is formed by the process that
comprises the steps of contacting said substrate with a
deposition gas stream characterized in that said substrate has
a resistivity less than 10 ohm-cm, said semi-insulating3
region has a resistivity of at least 10 ohm-cm, said semi-6
insulating region is epitaxial to said substrate and said
semi-insulating region is formed by introducing a dopant
precursor comprising a composition chosen from the groups
consisting of ferrocene based compositions and iron
pentacarbonyl based compositions into said deposition gas
stream wherein said deposition gas stream is produced by
combining entities including an organo-indium compound and a
2
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