Appeal No. 1997-0988
Application No. 08/199,910
The examiner makes unsupported assertions (Answer, page
4) that "[t]he 'substrate' is an inert supporting body, and
need not form any part of any 'active regions,'" and that
"normally integrated circuit III-V devices, as the
specification describes on page 3, are in fact formed on semi-
insulating substrates, with 'active regions' (and insulating
regions) formed over those semi-insulating substrates."
However, the examiner fails to recognize that regardless of
what integrated circuit III-V devices may "normally" use for
substrates, the specification taken as a whole determines the
type of substrate used in the instant application. As
explained above, the combination of what is explicitly
disclosed and the implications therefrom support a conclusion
that appellants' substrate is in fact semiconducting and not
"an inert supporting body."
To summarize, appellants indicate that semi-insulating
regions are formed by doping semiconducting material.
Appellants describe forming indium phosphide semi-insulating
layers, thereby implying that indium phosphide is a
semiconducting material. Appellants specify in the examples
that the substrate is made of indium phosphide. As indium
6
Page: Previous 1 2 3 4 5 6 7 8 9 Next
Last modified: November 3, 2007