Appeal No. 1997-0988
Application No. 08/199,910
Further, appellants state (Specification, page 2, lines
1-2) that "[s]emi-insulating material is generally formed by
suitably doping the desired III-V semiconductor material."
Appellants continue with a description of the formation of
semi-insulating gallium arsenide, which "involves introducing
chromium as a dopant," and "chemical vapor deposition (CVD)
growth in a gas transport system" (Specification, page 2,
lines 6-9). The next paragraph (Specification, page 2, lines
32-33) begins, "[i]ndium phosphide has also been formed by a
CVD process," and then describes the specifics of making semi-
insulating indium phosphide by a gas transport system.
Appellants conclude (Specification, page 3, lines 16-18) that
"only chromium-based dopant precursors have been utilized to
form semi-insulating indium phosphide." Thus, appellants
imply that indium phosphide begins as semiconducting and
becomes semi-insulating after suitable doping. Appellants'
examples all begin with a "polished indium phosphide
substrate" (Specification, page 8, line 21, page 10, line 5,
and page 11, lines 29-31). Accordingly, appellants'
substrates are semiconducting, which, as defined by
appellants, means having a resistivity less than 10 ohm-cm.3
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