Appeal No. 97-2422
Application 07/939,720
the same substrate or otherwise build the drive circuits in a
liquid crystal cell unit. It is further noted that the top of
page 4 of appellant's specification indicates that the prior art
considers that silicon nitride is a passivation film from which
hydrogenation is effected since silicon nitride contains a large
amount of hydrogen and serves as a favorable hydrogen source.
Pages 2 and 4 also indicate that polyamide resins have been used
as protective films including orienting films and films that have
been directly formed on silicon nitride protective films.
Thus, appellant's own assessment of the prior art indicates
that both silicon dioxide and silicon nitride layers have been
used in the prior art for both insulating and protective or
passivation purposes. This is also evident in Kirk-Othmer,
Encyclopedia of Chemical Technology, 3rd Edition, Vol. 20, page
644 (1982), a copy of which is provided as an attachment to this
opinion. We cite this reference merely to confirm the state of
the prior art and is in accordance with In re Boone, 439 F.2d
724, 727, 169 USPQ 231, 234 (CCPA 1971), since this encyclopedia
is considered a standard reference work.
To round out appellant's discussion with respect to their
own Figure 1 embodiment the paragraph bridging pages 8 and 9,
indicates that a silicon oxide compound such as PSG in this
4
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