Appeal No. 1998-0970
Application 07/995,325
the natural oxide removal process of Allman to prepare the
surface.
As to difference (3), the Examiner finds that Griswold
teaches deposition of impurity films by decomposition of
organic compounds at a suitable temperature to be suitable in
the process of Tsunashima (citing col. 5, lines 1-20; col. 7,
lines 18-22 and 32-36; and col. 8, lines 4-11) and concludes
that it would have been "within the scope of one of ordinary
skill in the art to employ the recited temperature range when
appropriate in view of this teaching" (EA4).
Appellants argue that Tsunashima does not cite any
temperatures for the step of depositing a boron layer on the
substrate surface and, while the Tsunashima does mention
vacuum evaporation, sputtering, CVD, etc., it is known that
these processes can also be carried out at low temperature.
It is argued that Griswold discloses the deposition of
impurity films of organic compounds at 350EC and that the
upper limit of the temperature is the temperature at which the
radical group begins to break down, but that this upper limit
is not specified (Br9).
The Examiner does not respond to these arguments.
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