Appeal No. 1998-0970
Application 07/995,325
deposition of the oxide of semiconductor material" (col. 7,
lines 13-17), although the temperatures can be as low as
250E C for deposition of the active impurity (col. 7,
lines 68-72) and 500E C for depositing the semiconductor
material (col. 7, line 75 to col. 8, line 3). Griswold
discloses that the upper limit of the temperatures is the
temperature at which the radical group begins to break down,
because the breakdown of the radical group causes undesirable
products of combustion that contaminate the surface of the
semiconductor body (col. 8, lines 4-11).
Although we agree with the Examiner that it would have
been obvious to one of ordinary skill in the art to use other
conventional processes for depositing the boron layer in
Tsunashima, including the process taught in Griswold, Griswold
does not disclose a high temperature process of depositing the
impurity that meets the claim limitations. In fact, Griswold
discloses that the impurity should be deposited at relatively
low temperatures (350E C) at which no diffusion of the active
impurity material into the semiconductor body can occur
(col. 3, lines 13-20), which is contrary to the use of high
temperatures of 600-1000E C, as claimed. Griswold also
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