Appeal No. 1998-0970
Application 07/995,325
teaches away from high temperatures because they can cause
breakdown of the radical group leading to undesirable products
of combustion and contamination of the semiconductor surface.
The Examiner's reasoning that it would have been "within the
scope of the art to employ the recited temperature range when
appropriate" (EA4) fails to deal with these contrary teachings
of Griswold and fails to provide any reason for using a high
temperature range not disclosed in Griswold. Thus, the
Examiner fails to establish a prima facie case of obviousness.
Gong discloses depositing a layer of amorphous silicon, a
layer of Sb, and a layer of amorphous silicon followed by
annealing. While Gong may disclose putting down a layer of
silicon before a layer of impurity material, which is relevant
to claim 15, step h), it does not disclose the temperature
during deposition of the impurity component and, so, does not
cure the deficiency of Tsunashima, Nickl, Allman, and Griswold
with respect to the step of depositing an impurity component
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