Appeal No. 1999-1517
Application No. 08/837,523
written description of the invention. We have evaluated the
various references made by appellants on page 9 of the
principal brief and also on pages 4 and 5 of the reply brief.
We do not find adequate support for the written description of
the phrase recited above. Appellants’ first reference for
this description is on page 6 of the specification, where it
is stated (page 6, lines 10 to 11) that “at this point in the
process, polysilicon gate 110 and device region 102 are
essentially devoid of P-type doping.” Appellants also make
reference to lines 12 and 13 on page 3 of the specifi-cation.
Both references to the specification refer to only the status
of a process before the claimed process is conducted.
As pointed out by the examiner (answer at page 7), “[t]he
diffusion step is not shown until Figure 1G and is not
described in the specification until page 6, line 14 of the
specification.” (Emphasis in original.) Appellants also make
reference to various other parts of the specification at page
4 of the reply brief. For example, appellants state, id, that
“[a]s a result of this process, . . . Page 6, lines 21-22.
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