Appeal No. 2001-0113
Application No. 08/604,751
structure does not anticipate claim 13 because the repeated
memory cell would still fail to include two plugs (56) separated
by a maximum distance approximately equal to a minimum
photolithographic limit. See Appeal Brief, Paper No. 21, page 9,
lines 17 through page 10, lines 6.
Upon review, even if we found that it would have been
obvious to repeat the memory cell structure taught by Juengling
in Figure 10 in order to form a memory device, the repeated
memory cell structure still fails to teach the spacing limitation
of claim 13 which is "two first conductive plugs having a first
type conductivity distanced one from the other by a maximum
distance approximately equal to a minimum photolithographic
limit." In contrast, Juengling's Figure 10 shows that the memory
cell structure has a series of at least three second conductivity
plugs (104) formed after first conductive plug (56). Juengling
further teaches on column 6, lines 60-6, that each plug (104) has
a thickness between 3,000 to 8,000 angstroms. Thus, when the
memory cell structure is repeated, the distance between first
conductive plugs (56) would include the width of at least three
second conductivity plugs (104); this totals a minimum distance
of 9,000 to 24,000 angstroms. Therefore, the distance between
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