Appeal No. 2003-0886
Application No. 09/466,845 Page 9
at the interface between the I-layer 4 and the Cr film using
mutual diffusion of the I-layer and the Cr film. Subsequently,
a part of the non-reaction Cr film patterned such that the Cr
film is separated from the end potions of the Cr silicide layers
8 on the channel region side. The separated Cr films are used
together with the Cr silicide film layer 8 to constitute source
and drain electrodes 9. As shown in figure 10E, as a result of
implantation, the source and drain regions 11 are formed around
the Cr silicide layers 8 in the I-layer 4 (col. 11, lines 17-19).
In addition, Hirano discloses that the Cr silicide layers 8 are
formed at the interface between the I-layer 4 and the Cr film
using reaction of the I-layer and the Cr film (col. 11, line 64
through col. 12, line 2). From the disclosure of Hirano, we find
that the silicide layer is used in the formation of the source
and drain electrodes, and agree with appellant that because
Hirano uses the silicide layer in the formation of source and
drain electrodes, and because of the different structures
disclosed by Chen and Hirano, we find no teaching or suggestion
of adding the silicide layer between the bitlines 44 and top gate
dielectric layer 48 of Chen.
We are not persuaded by the examiner's assertion (answer,
page 4) that modifying Chen in view of Hirano's teachings would
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