Appeal No. 2003-0886
Application No. 09/466,845 Page 11
impurity diffusion layers are formed adjacent to and between the
second conductivity type high concentration impurity diffusion
layers on the first conductivity type semiconductor layer.” The
examiner (answer, page 5) relies upon Hirano for a teaching of a
salicide layer in contact with the source and drain regions, and
asserts (answer, page 6) that “Kapoor discloses a transistor
structure comprising: a first conductivity type semiconductor
layer (2); second conductivity type high concentration impurity
diffusion layers (26 and 38, source/drain regions) formed in the
layer (2); second conductivity type low concentration impurity
diffusion layers (56 and 58, LDD regions) formed in the layer (2)
adjacent to and between the second conductivity type high
concentration impurity diffusion layers. See Kapoor’s Fig. 8.”
The examiner asserts (id.) that it would have been obvious
to incorporate the LDD regions of Kapoor into Chen's transistor
to reduce the electric field, which migrates short channel
effects, reduces hot-carrier generation, and increases the
junction breakdown voltage.
Appellant asserts (brief, page 9) that the source/drain
silicide contacts 46, 48 and metal contacts 76, 78 of Kapoor are
not required or needed in Chen, and that because Chen does not
need the contacts, there would have been no reason as to why an
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