Ex Parte Arafa et al - Page 11




          Appeal No. 2004-0550                                                        
          Application No. 09/802,201                                                  


               With regard to the rejection of claims 10-13, appellants               
          present the same arguments discussed above with respect to Draper           
          and the combination of Rajkanan, Lee, Wu and Boden (Brief, pages            
          11-12).  Accordingly, we adopt our remarks from above.                      
               With regard to the rejection of claims 14 and 15, appellants           
          argue that Dennen is directed to transistors, and is “teaching              
          away” from the claimed invention by teaching towards the                    
          reduction in capacitance in the device (Brief, page 13).                    
          Appellants further argue that Appel is directed to doping the               
          gate with p-type dopants while the source/drain regions are also            
          doped p-type, and there is no motivation for combining elements             
          from different structures to achieve the claimed invention                  
          (Brief, page 14).  These arguments are not persuasive for reasons           
          stated by the examiner (Answer, pages 21-23), namely that Dennen            
          does teach some capacitance, even if it might be “reduced.”                 
          Therefore, Dennen does not teach away from a capacitor device but           
          teaches a device with capacitance.  See In re Gurley, 27 F.3d               
          551, 553, 31 USPQ2d 1130, 1131 (Fed. Cir. 1994).  The examiner              
          also reiterates that Appel was not applied to show the claimed              
          doping of the polysilicon gate with p-type dopants over n-type              




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