Ex Parte M Huang et al - Page 3




              Appeal No. 2006-2525                                                                                     
              Application No. 10/178,672                                                                               

                     Claims 8 and 9 stand rejected under 35 U.S.C. § 103 as being unpatentable over                    
              Celler, Leipold, and Wong.                                                                               
                     We refer to the Rejection (mailed May 5, 2005) and the Examiner’s Answer                          
              (mailed Mar. 20, 2006) for a statement of the examiner’s position and to the Brief (filed                
              Jan. 6, 2006) and the Reply Brief (filed May 18, 2006) for appellants’ position with                     
              respect to the claims which stand rejected.                                                              


                                                      OPINION                                                          
                     Based on appellants’ arguments in the Brief, we will decide the appeal on the                     
              basis of rejected claim 3.1  See 37 CFR § 41.37(c)(1)(vii).                                              
                     The examiner finds that Celler teaches the subject matter of instant claim 3                      
              except for a patterned low resistivity buried layer and the active RF device as it relates               
              to the patterned low resistivity buried layer.  Celler teaches a digital CMOS device (col.               
              4, ll. 4-6).  Although not express in the statement of the rejection (Answer at 3-4), Celler             
              also does not teach how the digital circuit might relate to a patterned low resistivity                  
              buried layer.  The examiner further finds that Leipold teaches forming a patterned low                   
              resistivity buried layer, as specified by the claim, only beneath a digital CMOS circuit                 
              (e.g., under field effect transistors 12; Leipold Fig. 1).  The examiner concludes that the              
                                                                                                                       
                     1 Appellants’ remarks in response to the rejection of claims 8 and 9 rely on the argued deficiencies
              in the rejection applied against base claim 3.                                                           


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