Ex Parte Hagiwara - Page 7

               Appeal 2007-1017                                                                       
               Application 10/204,997                                                                 
          1                polishing portion having a second buff that can be in contact              
          2                with the beveled surfaces, and a third polishing portion having a          
          3                third buff that can be in contact with the rounded edges formed            
          4                between the peripheral side surface and each of the beveled                
          5                surfaces, wherein the first, second, and third polishing portions          
          6                are provided on the peripheral surface of the apparatus                    
          7                independently of one another.  (Hasegawa 2:62-3:5.)                        
          8          17. Hasegawa’s Figure 2 is reproduced below.                                     







          9                                                                                           
         10                                                                                           
         11          18. Hasegawa’s Figure 2 shows an apparatus 10 for mirror-                        
         12                polishing a semiconductor wafer, wherein relevant reference                
         13                characters 11, 13, 14, W, and M denote a polishing device, a               
         14                polishing member, a rotary shaft, a semiconductor wafer, and a             
         15                motor for rotating polishing member 13 through rotary shaft 14.            
         16                (Hasegawa 4:1-43.)                                                         
         17          19. Hasegawa explains that prior art polishing methods are time                  
         18                consuming because variations in the thickness of the wafer or              
         19                the shape of the peripheral chamfered portion of the wafer                 
         20                prevent all the surfaces to be polished from being in contact              
         21                with the surface of the polishing device from the start, thus              

                                                  7                                                   

Page:  Previous  1  2  3  4  5  6  7  8  9  10  11  12  13  14  15  Next

Last modified: September 9, 2013